The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2002
Filed:
Aug. 04, 1999
Shuichi Ueno, Tokyo, JP;
Yoshinori Okumura, Tokyo, JP;
Shigenobu Maeda, Tokyo, JP;
Shigeto Maegawa, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
According to a semiconductor device and a method of manufacturing the same, a trade-off relationship between threshold values and a diffusion layer leak is eliminated and it is not necessary to form gate oxide films at more than one stages. Since impurity dose are different from each other between gate electrodes ( A to C) of N-channel type MOS transistors (T to T ), impurity concentration in the gate electrodes ( A to C) are different from each other. The impurity concentration in the gate electrodes are progressively lower in the order of higher threshold values which are expected.