The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2002
Filed:
Mar. 19, 2001
Chine-Gie Lou, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A different method is provided for forming high aspect ratio damascene structures with an integrated approach of combining electroless plating with physical vapor deposition of copper. A dual damascene structure, having a trench opening and a via opening, is first formed over a metal line on a substrate. The inside walls of the dual structure is lined with a diffusion barrier layer. Then, nitride spacers are formed on the inside walls of both the trench opening and the via opening. The via opening is further lined with a displacement, or, seed, layer. This is followed by forming electroless copper in the via opening, and hence a copper plug. A barrier metal is now formed over both the copper plug and the inside walls of the trench opening. Copper is next deposited over the barrier metal inside the trench, and including over the copper metal plug, using physical vapor deposition (PVD). Any excess metal is subsequently removed by CMP, thus forming a copper dual damascene interconnect that is highly conformable for high aspect ratios, and also void-free and reliable.