The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2002

Filed:

Apr. 10, 2000
Applicant:
Inventors:

Howard E. Rhodes, Boise, ID (US);

Mark Visokay, Boise, ID (US);

Tom Graettinger, Boise, ID (US);

Dan Gealy, Kuna, ID (US);

Gurtej Sandhu, Boise, ID (US);

Cem Basceri, Boise, ID (US);

Steve Cummings, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/972 ;
U.S. Cl.
CPC ...
H01L 2/972 ;
Abstract

A capacitor for a memory device is formed with a conductive oxide for a bottom electrode. The conductive oxide (RuO ) is deposited under low temperatures as an amorphous film. As a result, the film is conformally deposited over a three dimensional, folding structure. Furthermore, a subsequent polishing step is easily performed on the amorphous film, increasing wafer throughput. After deposition and polishing, the film is crystallized in a non-oxidizing ambient.


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