The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2002

Filed:

Jun. 04, 2002
Applicant:
Inventors:

Ching-Hsiang Hsu, Hsin-Chu, TW;

Kung-Hong Lee, Tung-Kang, TW;

Ching-Sung Yang, Hsi-Hu, TW;

Assignee:

eMemory Technology Inc., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/604 ; H01L 2/9788 ;
U.S. Cl.
CPC ...
G11C 1/604 ; H01L 2/9788 ;
Abstract

A flash memory cell with an embedded gate structure capable of storing two bits of information and the operation of such a flash memory cell are provided. A first ion-doped region, serving as a source terminal, is formed in a semiconductor substrate. An embedded gate structure and a second ion-doped region are alternately arranged on the first ion-doped region. The embedded gate structure is surrounded by the first oxide layer, the trapping layer, and the second oxide layer. An insulating layer is formed on the embedded gate structure. A diffusion drain is positioned atop the second ion-doped region and a conductive layer connects with the diffusion drains. The embedded gate structure is isolated from the diffusion drain with the insulating layer. Furthermore, the reading, programming, and erasing operation of the memory cell with two bits of information are provided.


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