The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2002
Filed:
Dec. 12, 1996
Son Van Nguyen, Hopewell Junction, NY (US);
Christopher Joseph Waskiewicz, Poughkeepsie, NY (US);
Donna Rizzone Cote, Poughguag, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A layer of doped oxide glass is deposited on a semiconductor device in a chemical vapor deposition chamber by reacting gaseous sources of silicon, ozone and at least one boron or phosphorus dopant in a carrier gas, the ozone being present in a ratio of about 9-15 weight percent of the carrier gas. The deposited layer of doped oxide glass contains no greater than about 4 weight percent each of boron and phosphorus concentration and is annealed at a temperature no greater than about 700° C. for a time sufficient to soften and outgas any residual moisture in the oxide glass layer and level the upper surface to a desired degree.