The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2002
Filed:
Oct. 16, 2001
Applicant:
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/1469 ;
Abstract
A method of forming a SOG insulation layer of a semiconductor device comprises the steps of forming the SOG insulation layer on a substrate having a stepped pattern using a solution containing a polysilazane in an amount of less than 20% by weight in terms concentration of solid content, performing a pre-bake process for removing solvent ingredients in the insulation layer at a temperature of 50 to 350° C., and annealing at a temperature of 600 to 1200° C. The method of the invention further includes performing a hard bake process at a temperature of about 400° C. between the pre-bake process and the annealing step. Also, the polysilazane is desirably contained in an amount of 10 to 15% by weight.