The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2002

Filed:

Aug. 23, 2001
Applicant:
Inventors:

Luke Zhang, Santa Clara, CA (US);

Ruiping Wang, Fremont, CA (US);

Ida Ariani Adisaputro, San Jose, CA (US);

Kwang-Soo Kim, Mountain View, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract

A substrate having a patterned mask and exposed openings is provided in a process chamber having process electrodes. In a plasma ignition stage, a process gas is provided in the process chamber and is energized by maintaining the process electrodes at a plasma ignition bias power level. In an etch-passivating stage, an etch-passivating material is formed on at least portions of the substrate by maintaining the process electrodes at an etch-passivating bias power level. In an etching stage, the exposed openings on the substrate are etched by maintaining the process electrodes at an etching bias power level.


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