The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2002
Filed:
Mar. 22, 2001
Tai-Ju Chen, Tainan, TW;
Hua-Chou Tseng, Hsin Chu, TW;
Abstract
A method for forming a self-aligned local-halo metal-oxide-semiconductor device is provided. The present method is characterized in that a pair of first sidewall spacers is firstly formed on opposite sides of a gate electrode over a semiconductor substrate, and then a pair of second sidewall spacers is formed, each of which formed on one side of each first sidewall spacer. Next, a raised source/drain is formed upward on the substrate between each shallow trench isolation and each second sidewall spacer. Thereafter, the pair of second sidewall spacers is stripped away. Then, the gate electrode and raised source/drain act as the self-aligned ion implant masks, a LDD/Halo implantation is performed to form a local LDD/Halo diffusion region between each shallow trench isolation and each of the first sidewall spacers.