The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2002
Filed:
Dec. 16, 1999
Applicant:
Inventors:
Isao Ochiai, Otsuki, JP;
Kimio Kanda, Hitachi-naka, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 1/24 ; G01J 1/02 ; G01T 1/24 ; H01T 2/500 ;
U.S. Cl.
CPC ...
G01J 1/24 ; G01J 1/02 ; G01T 1/24 ; H01T 2/500 ;
Abstract
The semiconductor radiation detector has a low leakage current, high radiation detecting efficiency and low cost. A high-density impurity layer of the detector is formed at least on one surface of a semiconductor crystal wafer beforehand. A crystal of a size required for forming the detector is diced from the wafer and the diced surfaces of the crystal have a mirror finished surface. A passivation film is formed on the diced surfaces of the crystal immediately after polishing.