The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2002
Filed:
Jul. 18, 2001
Eiji Hirose, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
The present invention concerns a plasma processing apparatus for processing a processing object by applying two types of high-frequency power with different frequencies to generate plasma. A first high-frequency line is provided with a first filter circuit for attenuating a high-frequency current from a second high-frequency power supply. A second high-frequency line is provided with a second filter circuit for attenuating a high-frequency current from a first high-frequency power supply. The first filter circuit is provided with a variable capacitor for changing a circuit constant. For changing the circuit constant, the variable capacitor is varied so that a resonance point becomes greater than an optimum resonance point most attenuating a high frequency in the second high-frequency power supply. Doing so decreases a sputter rate of the generated plasma affected on a wall surface of the processing chamber.