The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2002
Filed:
Jan. 04, 2001
Hitoshi Wakabayashi, Tokyo, JP;
Yukishige Saito, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
One object of the present invention is to suppress a threshold voltage of at least an n-channel MISFET using a nitride of a high melting point metal at it's gate electrode. In order to achieve the object, a gate electrode of a p-channel MISFET is constituted of a titanium nitride film and a tungsten film formed on the film and a gate electrode of an n-channel MISFET is constituted of a titanium nitride film and a tungsten film formed on the film . The titanium nitride film is formed by nitrogen ion implantation in the titanium nitride film to decrease the work function.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile