The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2002
Filed:
Aug. 16, 2000
Applicant:
Inventor:
Chao-chueh Wu, Hsinchu, TW;
Assignee:
Promos Technologies, Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1311 ;
U.S. Cl.
CPC ...
H01L 2/1311 ;
Abstract
A method of etching in a plasma etching chamber having an upper electrode and a susceptor is disclosed. The method comprises: setting the upper electrode and the susceptor to a first predetermined distance; performing a first etch at the first predetermined distance for a first predetermined time; setting the upper electrode and the susceptor to a second predetermined distance; and performing a first etch at the second predetermined distance for a second predetermined time.
Wu, Chao-chueh. (2002). Two step plasma etch using variable electrode spacing (U.S. Patent No. 6482744). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6482744
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile