The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2002
Filed:
Feb. 20, 2001
Applicant:
Inventors:
Jeng-Hung Sun, Tainan, TW;
Wen-Tung Wang, Hsinchu, TW;
Assignee:
Industrial Technology Research Institute, Hsinchu Hsien, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
The invention discloses a manufacturing method for improving the reliability of polysilicon thin film transistors to solve electric leaking problem due to the roughness of polysilicon layer surface. In the thin film transistor manufacturing process, a polysilicon layer surface is oxidized to produce a silicon oxide layer which is then removed by an etching solution. This method can planarize bumps on the polysilicon layer generated due to re-crystallization so as to effectively lower the roughness of the polysilicon surface, thus increasing the reliability of thin film transistors.