The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2002
Filed:
Jul. 07, 2000
Colin C. Davis, Corvallis, OR (US);
Eric L. Nikkel, Philomath, OR (US);
Martha A. Truninger, Corvallis, OR (US);
Ronald L. Enck, Corvallis, OR (US);
Hewlett-Packard Company, Palo Alto, CA (US);
Abstract
An inkjet printhead and a method of fabricating an inkjet printhead is disclosed. The inkjet printhead includes a conducting material layer deposited on an insulative dielectric. The conducting material layer has a chamber formed between a first and a second section of the conducting material layer. A dielectric material is fabricated on the first and second sections of the conducting material layer and on the insulative dielectric in the chamber. The dielectric material has a planarized top surface. A first via is formed in the dielectric material, thereby exposing a portion of the first section of the conducting material layer. A second via is formed in the dielectric material, thereby exposing a portion of the second section of the conducting material layer. The first and second vias each having sidewalls sloped at an angle in the range of approximately 10-60 degrees. A resistive material layer is formed in the first and second vias and on the planarization dielectric between the first and second vias through a single photoresist mask and a single etch process. A passivation material layer is formed onto the planarization dielectric material and onto the resistive material layer.