The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2002
Filed:
Aug. 30, 1999
Ju-Hoon Yoon, Seoul, KR;
Dae-Byung Kang, Seoul, KR;
Amkor Technology, Inc., Chandler, AZ (US);
Abstract
A circuit pattern tape for the wafer-scale production of chip size semiconductor packages is adapted to be laminated onto a semiconductor wafer and includes a flexible insulating layer, a plurality of identical circuit pattern units arrayed thereon, and a solder mask covering the circuit patterns. Each circuit pattern unit includes a central opening, a plurality of bond fingers arranged on opposite sides of the opening and electrically connected through the opening to associated die pads on an underlying semiconductor chip in the wafer, a plurality of solder ball lands, each having a solder ball attached thereto, and a plurality of conductive traces electrically connecting respective ones of the bond fingers and the solder ball lands to each other. The bond fingers and central opening are arranged so that they do not intersect singulation lines defining the coincident edges of the corresponding individual circuit pattern units and chips after they are cut from the wafer-tape assembly, thereby eliminating chipping of the wafer. The circuit pattern units may include a dummy pattern that is made of the same conductive metal as the solder ball lands, the conductive traces, and the bond fingers, and which is arranged on the circuit pattern to achieve a uniform distribution of the conductive metal thereon and thereby minimize voids between the tape and the wafer and bowing in the dissimilar materials of the tape due to a change in its temperature.