The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2002
Filed:
Nov. 21, 2000
Applicant:
Inventors:
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/362 ;
U.S. Cl.
CPC ...
H01L 2/362 ;
Abstract
A electrostatic discharge (ESD) device with salicide layers isolated by a shallow trench isolation in order to save one salicide block photomask. A shallow trench isolation is formed in drain region to isolate a portion of the drain region, so that the drain region is partitioned into two parts. A salicide layer is formed on the drain region. Since the salicide layer is not formed on the shallow trench isolation, without using an additional photomask, the salicide layer on the drain region is partitioned into two parts. The effect of the local thermal energy occurring to drain junction upon the contact metal of the drain region is eliminated.