The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2002
Filed:
Oct. 25, 2001
Applicant:
Inventor:
Joseph Wu, Hsinchu Hsien, TW;
Assignee:
ProMOS Technologies Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
A semiconductor memory cell has a deep trench capacitor and a vertical transistor formed over the deep trench capacitor. The vertical transistor has a control gate electrode, a source/drain region at opposite sides of the control gate electrode, and a channel region surrounding the sidewall and top of the control gate electrode. This can increase the length of the channel region to reduce leakage current.