The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2002
Filed:
Mar. 23, 2001
Anelva Corporation, Tokyo, JP;
Abstract
An ion source of an ion attachment mass spectrometry apparatus has an emitter and a voltage-impressed portion for impressing a bias voltage to the emitter. In the ion source, the emitter is heated to emit positive charge metal ions that are attached to a detected gas to ionize it. By changing the material of the emitter, the electrical resistance between the ion emission point of the emitter and the reference-voltage-impressed portion of the voltage-impressed portion is reduced. By shortening the distance between the reference-voltage-impressed portion and the ion emission point, the electrical resistance between the ion emission point of the emitter and the reference-voltage-impressed portion of the voltage-impressed portion is reduced to not more than 10 &OHgr;. It is also possible to form a thin film emitter on the surface of the reference-voltage-impressed portion. Due to this, it is possible to suppress the occurrence of fluctuations in the potential difference between the ion emitter and the reference-voltage-impressed portion, stabilize the amount of ion emission, and analyze the mass with a high accuracy.