The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2002
Filed:
Sep. 27, 2000
Asahi Kasei Kabushiki Kaisha, , JP;
Abstract
Disclosed is a method for producing a circuit structure having an insulator layer comprising a porous silicon oxide thin film, which comprises (1) forming a preliminary insulator layer comprising a silicon oxide-organic polymer composite thin film formed on a substrate, which silicon oxide-organic polymer composite thin film comprises a silicon oxide having an organic polymer dispersed therein, (2) forming, in the preliminary insulator layer, a groove which defines a pattern for a circuit, (3) forming, in the groove, a metal layer which functions as a circuit, and (4) removing the organic polymer from the preliminary insulator layer to render the preliminary insulator layer porous, thereby converting the preliminary insulator layer to an insulator layer comprising a porous silicon oxide thin film. By the method of the present invention, the capacitance between mutually adjacent circuit lines (line-to-line capacitance) in the circuit structure can be lowered.