The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2002
Filed:
Nov. 06, 2000
Kousuke Miyoshi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method of forming a shallow trench isolation, includes the steps, in sequence, of (a) forming a mask pattern on a silicon substrate, the mask pattern being made of a silicon dioxide layer and a silicon nitride layer, (b) forming a trench in the silicon substrate with the mask pattern being used as a mask, (c) forming a first silicon dioxide film covering an inner surface of the trench such that the trench is not filled with the first silicon dioxide film, (d) heating the first silicon dioxide film, (e) forming a second silicon dioxide film over a product resulted from the step (d) such that the trench is filled with the second silicon dioxide film, (f) heating the second silicon dioxide film, (g) polishing the first and second silicon dioxide films through the use of the silicon nitride layer as a stopper, (h) etching the silicon nitride layer for removal, and (i) etching the first and second silicon dioxide films such that the first and second silicon dioxide films are on a level with a surface of the silicon substrate.