The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2002
Filed:
Mar. 10, 2000
Gilbert Hausmann, Ben Lomond, CA (US);
Vijay Parkhe, San Jose, CA (US);
Jagadish Kalyanam, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of depositing a metal nitride material, formed by the decomposition of an organometallic precursor, useful as a barrier layer for an integrated circuit using a conducting metal. More particularly, the invention provides a method of depositing a niobium nitride layer on a substrate for use in copper metallization. In one aspect of the invention an organometallic precursor having the formula Nb(NRR′) , the formula (NRR′) Nb═NR″, or combinations thereof, is introduced into a processing chamber in the presence of a processing gas, such as ammonia, and the metal nitride film is deposited by the thermal or plasma enhanced decomposition of the precursor on a substrate. The deposited niobium nitride layer is then exposed to a plasma to remove contaminants, reduce the film's resistivity, and densify the film.