The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2002

Filed:

Mar. 30, 2001
Applicant:
Inventors:

Kenneth J. Giewont, Hopewell Junction, NY (US);

Yun Yu Wang, Poughquag, NY (US);

Russell Arndt, Wappingers Falls, NY (US);

Craig Ransom, Hopewell Junction, NY (US);

Judith Coffin, Pleasant Valley, NY (US);

Anthony Domenicucci, New Paltz, NY (US);

Michael MacDonald, Yorktown Height, NY (US);

Brian E. Johnson, Essex Junction, VT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ;
Abstract

A method for preparing a semiconductor material for formation of a silicide layer on selected areas thereupon is disclosed. In an exemplary embodiment of the invention, the method includes removing at least one of a nitride and an oxynitride film from the selected areas, removing metallic particles from the selected areas, removing surface particles from the selected areas, removing organics from the selected areas, and removing an oxide layer from the selected areas.


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