The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2002
Filed:
Feb. 25, 2002
Chih-Chiang Chen, I-Lan Hsien, TW;
Chih-Hong Chen, Hsinchu Hsien, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A polysilicon thin film transistor (poly-Si TFT) with a self-aligned lightly doped drain (LDD) structure has a transparent insulating substrate; a buffering layer formed on the transparent insulating substrate; a polysilicon layer formed on the buffering layer and having a channel region, an LDD structure surrounding the channel region, and a source/drain region surrounding the LDD structure; a gate insulating layer formed on the polysilicon layer; a gate layer formed on the gate insulating layer and positioned over the channel region; an insulating spacer formed on the sidewall of the gate layer and positioned over the LDD structure; and a subgate gate layer formed on the insulating spacer.