The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2002
Filed:
Jun. 29, 2000
Applicant:
Inventors:
Ryu Hirota, Osaka, JP;
Masami Tatsumi, Osaka, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 2/510 ;
U.S. Cl.
CPC ...
C30B 2/510 ;
Abstract
A vapor phase growth apparatus for growing a group III-V nitride semiconductor (GaN) comprises a reaction ampoule having a container disposed therein for containing a group III element and an inlet for introducing nitrogen; excitation means for plasma-exciting nitrogen introduced from the inlet ; and heating means for heating a seed crystal disposed within the reaction ampoule and the container ; wherein, upon growing the group III-V nitride semiconductor on the seed crystal , nitrogen is introduced from the inlet , and no gas is let out from within the reaction ampoule