The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2002
Filed:
Dec. 15, 2000
Nagamasa Shiokawa, Nobeoka, JP;
Asahi Kasei Microsystems Co., Ltd., Tokyo, JP;
Abstract
To shorten a process for manufacturing a semiconductor device comprising a silicide and a non-silicide diffusion layers and to form a stable and highly homogenous non-silicide diffusion layer, ions are implanted to form a source/drain diffusion layer and then the substrate is subjected to rapid thermal oxidation in a short time to activate the ions while forming a new oxide film. A thermal oxide film ( ) consisting of the new oxide film including a protective oxide film ( ) is etched to form an oxide film for preventing silicidation ( ), a Ti film ( ) is formed over the whole surface including the oxide film for preventing silicidation ( ), the product is annealed for silicidation and the unreacted Ti film ( ) is removed. Thus, a diffusion layer ( ) as a non-silicide layer which is little silicided and a diffusion layer ( ) whose surface is a silicide layer ( ) are formed.