The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Nov. 20, 2001
Tung-Cheng Kuo, Yilan Hsien, TW;
Chien-Hung Liu, Taipei, TW;
Shyi-Shuh Pan, Kaohsiung, TW;
Shou-Wei Hung, Chilung, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A silicon nitride read-only memory that prevents the antenna effect is described. The structure of the silicon nitride read-only memory includes a word-line, an electron-trapping layer and a metal protection layer. The word line covers the substrate. The electron-trapping layer is positioned between the word line and the substrate. The metal protection line covers the substrate and electrically connects the word line to a grounding doped region in the substrate. Moreover, the resistance of the metal protection line is higher than that of the word line. The charges generated during the manufacturing process are conducted to the substrate through the metal protection line. The resistance of the metal protection line is also higher than that of the word line. The metal protection line can be burnt out by a high current after the completion of the manufacturing process to ensure a normal operation for the read-only memory.