The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Jun. 06, 2000
Keisuke Hatano, Tokyo, JP;
Yasutaka Nakashiba, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A solid state image sensing device comprises a cell area, located at a semiconductor substrate, including photoelectric conversion portions and charge transfer portions and a peripheral circuit area formed around the cell area located at the semiconductor substrate. The peripheral circuit area includes a first p -type semiconductor region and an insulating film with a relatively large thickness formed on the first p -type semiconductor region. The cell area further includes a second p -type semiconductor region and an insulating film with a relatively small thickness formed on the second p -type semiconductor region. The majority of the insulating film with the relatively large thickness is formed by means of a CVD process.