The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Feb. 17, 2000
Applicant:
Inventors:
Hidekimi Kadokura, Tokyo, JP;
Yumie Okuhara, Sakado, JP;
Assignee:
Kabushikikaisha Kojundokagaku Kenkyusho, Saitama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C07F 1/900 ; C07F 9/00 ; B05D 5/12 ; C04B 3/546 ; C23C 1/600 ;
U.S. Cl.
CPC ...
C07F 1/900 ; C07F 9/00 ; B05D 5/12 ; C04B 3/546 ; C23C 1/600 ;
Abstract
A novel compound shown by M[N(OC H ) (OC H OCH )] , wherein M represents Sr or Ba, N represents Nb or Ta, which is a liquid at room temperature, is hard to be thermally dissociated, and has a vapor pressure of about 0.2 Torr at 190° C. The compound is produced by reacting 2 moles of N(OC H ) and from 1 to 1.1 moles of M(OC H OCH ) and then recovering the product by distillation. By using the compounds as raw materials for a CVD method, an SrBi Ta O thin film or a (Sr Ba )Nb O thin film for semiconductor devices can be produced.