The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Mar. 24, 2000
Takao Yonehara, Atsugi, JP;
Kunio Watanabe, Kawasaki, JP;
Tetsuya Shimada, Zama, JP;
Kazuaki Ohmi, Yokohama, JP;
Kiyofumi Sakaguchi, Yokohama, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of producing a semiconductor member comprises a first step of preparing a first member having a non-porous layer on a semiconductor substrate, and a second step of transferring the non-porous layer from the first member onto a second member, wherein use of the semiconductor substrate from which the non-porous layer is separated in the second step as a constituent material of the first member in the first step is conducted (n−1) times (“n” is a natural number not less than 2), the first and second steps are repeated n times, the semiconductor substrate is separated in n-th use in the second step and the separated semiconductor substrate is used for an use other than that of the first and second steps.