The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Mar. 23, 2001
Chine-Gie Lou, Hsinchu Hsien, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A process for forming a metal—insulator—metal (MIM), capacitor structure, in which platinum is employed for both the capacitor top plate and storage node structures, while a high dielectric constant layer, such as BaTiO is used for the capacitor dielectric layer, has been developed. Prior to formation of the MIM capacitor structure, an underlying, platinum storage node plug structure is formed in a narrow diameter opening, allowing communication between the MIM capacitor structure, and regions of an underlying transfer gate transistor, to be realized. A thin ruthenium shape is used as a seed layer to allow an electroless plating procedure to be employed for attainment of the platinum storage node plug structure.