The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Jun. 08, 2000
Applicant:
Inventors:
Taylor R. Efland, Richardson, TX (US);
Alec J. Morton, Plano, TX (US);
Chin-Yu Tsai, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ;
U.S. Cl.
CPC ...
H01L 2/18238 ;
Abstract
High performance digital transistors ( ) and analog transistors ( ) are formed at the same time. The digital transistors ( ) include first pocket regions ( ) for optimum performance. These pocket regions ( ) are masked from at least the drain side of the analog transistors ( ) to provide a flat channel doping profile on the drain side. Second pocket regions ( ) may be formed in the analog transistors. The flat channel doping profile provides high early voltage and higher gain.