The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Sep. 18, 2000
Shunichi Endo, Tokyo-To, JP;
Tadashi Hirata, Funabashi, JP;
Tokyo Electron Limited, Tokyo-to, JP;
Abstract
This invention is a method of: making a film-forming gas including a compound gas of carbon and fluorine into plasma in a vacuum container including a stage for an object to be processed and applying a bias electric power to the stage in order to draw ions in the plasma toward the object while forming an insulation film consisting of a film of fluorine-added carbon onto the object by the plasma. At first, a first electric power of the bias electric power is applied to the stage and the compound gas of carbon and fluorine is introduced at a first flow rate to form the film of fluorine-added carbon onto the object Then, a second electric power of the bias electric power smaller than the first electric power is applied to the stage and the compound gas of carbon and fluorine is introduced at a second flow rate smaller than the first flow rate to form the film of fluorine-added carbon onto the object According to the invention, in the case of filling up a concave portion having a high aspect ratio with a film of fluorine-added carbon, the film-forming process can be conducted while generating less voids with a raised throughput.