The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Mar. 30, 2000
Ulrike Grüning, Wappingers Falls, NY (US);
Hermann Wendt, Grasbrunn, DE;
Volker Lehmann, München, DE;
Reinhard Stengl, Stadtbergen, DE;
Hans Reisinger, Grünwald, DE;
Infineon Technologies AG, Munich, DE;
Abstract
An open form is produced with a plurality of in each case two-dimensionally structured layers. The form is made of silicon which is etchable in dependence on its doping. A first silicon layer is first produced, and a portion of the first layer which belongs to the form to be produced, is marked by doping at least one zone of the first layer. Subsequently, at least one further silicon layer is applied, and a portion belonging to the form is also marked therein. Finally, every unmarked portion of the layers is removed by etching depending on the respective doping of each layer. The open form is, in particular, a photonic crystal.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile