The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
Feb. 20, 2001
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A process for manufacturing a semiconductor device includes forming a first metallization level, forming a first etch stop layer, forming a low-k dielectric layer, forming a cap layer, depositing a resist, forming an opening; removing the resist, curing the dielectric material, etching the first etch stop layer, and filing the opening with metal. The first etch stop layer is formed over the first metallization level, and the low-k dielectric layer material is formed over the first etch stop layer. The cap layer is formed over the low-k dielectric layer material, and the resist is formed over the dielectric layer. Etching is used to form the opening. The resist is removed with an O stripping process. Curing of the dielectric material forms a dielectric layer and occurs after the resist is removed.