The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
May. 28, 1999
Applicant:
Inventors:
Takeshi Nogami, Atsugi, JP;
Shekhar Pramanick, Fremont, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
A method for eliminating copper atomic residue from the channel oxide layer on semiconductors after chemical-mechanical polishing is provided. After chemical-mechanical polishing, the silicon oxide is plasma etched to remove its surface and any residue. After plasma etching, an etch stop layer of silicon nitride is deposited by chemical-vapor deposition. Both the plasma etch of the silicon dioxide and the chemical-vapor deposition of the silicon nitride can be performed in the same vacuum chamber in the same semiconductor processing tool with only a change of the gas mixture.