The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2002
Filed:
Jun. 20, 2001
Mark T. Ramsbey, Sunnyvale, CA (US);
Narbeh Derhacobian, Belmont, CA (US);
Janet Wang, San Francisco, CA (US);
Angela Hui, Fremont, CA (US);
Tuan Pham, Santa Clara, CA (US);
Ravi Sunkavalli, Milpitas, CA (US);
Mark Randolph, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
One aspect of the present invention relates to a method of forming spacers in a silicon-oxide-nitride-oxide-silicon (SONOS) type nonvolatile semiconductor memory device, involving the steps of providing a semiconductor substrate having a core region and periphery region, the core region containing SONOS type memory cells and the periphery region containing gate transistors; implanting a first implant into the core region and a first implant into the periphery region of the semiconductor substrate; forming a spacer material over the semiconductor substrate; masking the core region and forming spacers adjacent the gate transistors in the periphery region; and implanting a second implant into the periphery region of the semiconductor substrate.