The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2002

Filed:

Nov. 21, 2000
Applicant:
Inventors:

Sunil Wickramanayaka, Tama, JP;

Yukito Nakagawa, Tachikawa, JP;

Assignee:

Anelva Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 7/24 ;
U.S. Cl.
CPC ...
H01J 7/24 ;
Abstract

A plasma processing system for sputter deposition application is configured by a reactor including two parallel capacitively-coupled electrodes called upper and lower electrodes, and a multi-pole magnet arrangement over the outer region of the upper electrode. The magnets are assembled on a metal ring in order to rotate over the upper electrode. The target plate is fixed to the upper electrode which is given only a high-frequency rf current, or high-frequency rf current and a DC voltage together. The lower electrode where the substrate is placed, is given a MF, HF or VHF rf current in order to generate a negative self bias voltage on the lower electrode to extract ionized sputtered-atoms that fill contact-holes on the substrate surface.


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