The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2002
Filed:
Mar. 19, 2001
Kazuhiko Yoshida, Kawasaki, JP;
Tatsuhiko Fujihira, Kawasaki, JP;
Motoi Kudoh, Kawasaki, JP;
Shoichi Furuhata, Kawasaki, JP;
Shigeyuki Takeuchi, Kawasaki, JP;
Fuji Electric Co., Ltd., , JP;
Abstract
A MOS type semiconductor apparatus is provided which includes a main MOS type semiconductor device, an internal control circuit connected between a control input terminal (G) and a control input port (g) of the main MOS type semiconductor device, and a protecting device connected between the control input terminal (G) and one of output terminals (S) of the apparatus, for protecting the semiconductor device or internal control circuit against overvoltage. The protecting device includes a first branch including a Zener diode (Z ) consisting of a polysilicon layer deposited on an insulating film over the semiconductor substrate, and a second branch including a Zener diode (Z ) formed in a surface layer of the semiconductor substrate, and a diode (Z ) that consists of a polysilicon layer deposited on an insulating film over the semiconductor substrate, and is connected in series with the Zener diode (Z ) in a reverse direction. The first and second branches are connected in parallel with each other.