The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2002

Filed:

Jul. 13, 1995
Applicant:
Inventors:

Jeff Allen Bullington, Albuquerque, NM (US);

Carl Elijah Montross, Jr., Albuquerque, NM (US);

Joseph Tate Evans, Jr., Albuquerque, NM (US);

Assignee:

Radiant Technologies, Inc, Albuquerque, NM (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/900 ; H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/900 ; H01L 2/976 ;
Abstract

A ferroelectric capacitor and method for making the same are disclosed. The ferroelectric capacitor may be constructed on a silicon substrate such as SiO or Si N . The ferroelectric capacitor includes a bottom electrode, a layer of ferroelectric material, and a top electrode. The bottom electrode is constructed from a layer of platinum which is bonded to the silicon substrate by a layer of metallic oxide. The metallic oxide does not diffuse into the platinum; hence, a thinner layer of platinum may be utilized for the electrode. This reduces the vertical height of the capacitor and other problems associated with diffusion of the layer used to bond, the bottom electrode to the substrate surface.


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