The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2002
Filed:
Jul. 27, 1998
Shigenobu Maeda, Tokyo, JP;
Tadashi Nishimura, Tokyo, JP;
Kazuhito Tsutsumi, Tokyo, JP;
Shigeto Maegawa, Tokyo, JP;
Yuuichi Hirano, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device for CSP mounting which avoids errors due to alpha rays and is highly stress-resistant is provided. A buried oxide film ( ) is formed on a semiconductor substrate ( ), and a MOS transistor having an SOI structure is formed on the buried oxide film ( ). The MOS transistor comprises source and drain regions ( ) formed in a semiconductor layer ( ), and a gate electrode ( ). An aluminum pad ( ) connected to any one of the source and drain regions ( ) through a connecting mechanism not shown, and a silicon nitride film ( ) having an opening on the top of the aluminum pad ( ) are formed on an interlayer insulation film ( ). A layer of titanium ( ) and a layer of nickel ( ) are formed extending from the aluminum pad ( ) to an end of the silicon nitride film ( ). A solder bump ( ) is disposed on the layer of nickel ( ).