The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2002
Filed:
Jun. 18, 2001
Jiann-Long Sung, Taipei, TW;
Abstract
A method of forming a nitride read only memory (NROM) is disclosed. On the present invention's method of forming the NROM, firstly one or a plurality of isolated layers are formed to cover the oxide/nitride/oxide (ONO) structure and the gate, and the silicon nitride (SiN ) spacer is formed to protect the NROM cell. If the silicon nitride spacer contacts with the gate directly, the threshold voltage of the NROM device will increase, therefore the present invention uses one or a plurality of the isolated layers composed of the silicon oxides (SiO ) to isolate the NROM device and the silicon nitride spacer. It not only can protect the NROM device, but also can avoid side effects resulting from the use of the silicon nitride spacer and inducing the leakage current between the devices.