The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2002
Filed:
Nov. 20, 2001
Yen-hung Yeh, Taoyuan Hsien, TW;
Tso-Hung Fan, Taipei Hsien, TW;
Mu Yi Liu, Taichung, TW;
Kwang Yang Chan, Hsinchu, TW;
Tao-Cheng Lu, Kaoshiung, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A method of fabricating a SONOS device, in which a first silicon oxide layer, a trapping layer, and a second silicon oxide layer are formed on the substrate. Then, a mask pattern is formed over the substrate to serve as a mask in the implantation process for forming the buried bit-lines. Afterward, a portion of the mask pattern is removed to increase the gap size of the mask pattern, then a pocket ion implantation is performed to form a pocket doped region at the periphery of the buried bit-line by using the mask pattern as a mask. Subsequently, the mask pattern is removed and a thermal process is conducted using the trapping layer as a mask to form a buried bit-line oxide layer. A word-line is subsequently formed over the substrate.