The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2002

Filed:

Jan. 12, 1999
Applicant:
Inventors:

Roger Durst, Middleton, WI (US);

Yacouba Diawara, Madison, WI (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 4/300 ;
U.S. Cl.
CPC ...
H01J 4/300 ;
Abstract

An electron multiplication apparatus uses a matrix of dielectric particles interspersed with conductive particles. Typically a porous layer of metal oxide and relatively inert metal, the material provides high electron count rates while maintaining good temperature stability. The layer is located between a cathode and an anode that together provide desired voltage differentials. A mesh is also used on a side of the matrix layer opposite the cathode to conduct surface charge away from the matrix, while providing an intermediate voltage potential between that of the anode and the cathode. A voltage source is used to generate the voltage potentials for each of the anode, cathode and mesh layer, and the resulting electric fields provide a device that may be used in the detection of high energy particles and photons, such as x-rays. A preferred method of fabricating the material involves the codeposition of a metal prone to oxidation and a relatively inert metal to form a porous layer. A subsequent oxidization step results in a metal oxide being intermingled with a conductive material. The resulting matrix has a high counting rate, but maintains a negative temperature coefficient.


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