The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2002
Filed:
Dec. 05, 2000
Teng-Chun Tsai, Hsin-Chu, TW;
Chia-Lin Hsu, Taipei, TW;
Yung-Tsung Wei, Pai-Ho Chen, TW;
Ming-Sheng Yang, Hsin-Chu, TW;
Abstract
A method for removing carbon-rich particles adhered on a copper surface, especially on a copper surface of a copper/low k dielectric dual damascene structure is provided. A barrier layer and a barrier-CMP stopping layer are formed between the copper layer and the low k dielectric layer of the dual damascene structure. After a Cu-CMP process and a barrier CMP process, a chemical buffing polishing process using an acidic aqueous solution under a downward force of about 0.5 to 3 psi is performed to remove carbon-rich particles adhered on the exposed copper surface, which is due to the low k dielectric layer having at least 90% carbon element being exposed and then polished during the Cu-CMP process and the barrier CMP process, resulting from a dishing phenomenon of the copper layer occurring during the two CMP processes. Alternately, a first chemical buffing polishing process is followed after the Cu-CMP process, and a second chemical buffing polishing process is followed after the barrier CMP process.