The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2002
Filed:
Aug. 06, 1991
Applicant:
Inventors:
Fu-Tai Liou, Carrollton, TX (US);
Charles Ralph Spinner, Dallas, TX (US);
Assignee:
STMicroelectronics, Inc., Carrollton, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ; H01L 2/144 ; H01L 2/1461 ;
U.S. Cl.
CPC ...
H01L 2/14763 ; H01L 2/144 ; H01L 2/1461 ;
Abstract
A contact opening through an insulating layer is filled with metal and etched back to form a metal plug within the opening. A metal interconnect line can then be formed over the contact, and makes electrical contact with the metal plug. Since the contact opening is filled by the metal plug, it is not necessary for the metal signal line to have a widened portion in order to ensure enclosure.
Liou, Fu-Tai. (2002). Semiconductor contact via structure and method (U.S. Patent No. 6455412). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6455412
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile