The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2002
Filed:
May. 03, 2001
Kwang-Ming Lin, Hsin Chu, TW;
Chih-Chung Lin, Yungkang, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
Within a method for forming a sacrificial silicon oxide layer, there is first provided a silicon semiconductor substrate. There is then thermally oxidized the silicon semiconductor substrate at a first temperature within a first oxidizing atmosphere to form a silicon oxide layer upon a partially consumed silicon semiconductor substrate formed from the silicon semiconductor substrate. There is then thermally oxidizing the partially consumed silicon semiconductor substrate at a second temperature greater than the first temperature, and within a second oxidizing atmosphere, to form from the silicon oxide layer upon the partially consumed silicon semiconductor substrate a further oxidized silicon oxide layer upon a further consumed silicon semiconductor substrate. Finally, there is then stripped from the further consumed silicon semiconductor substrate the further oxidized silicon oxide layer. By employing the method, microelectronic devices may be fabricated with enhanced performance within the further consumed silicon semiconductor substrate.