The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2002
Filed:
Jan. 28, 2002
Liang Gi Yao, Hsin Chu, TW;
Ming Fang Wang, Taichung, TW;
Shih Chang Chen, Taoyuan, TW;
Mong Song Liang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A new method is provided for the creation of a layer of gate dielectric for gate electrodes having deep sub-micron dimensions. The inventions provides three embodiments of cleaning the backside of a surface that is being processed for the creation of a gate electrode over the surface thereof. Solutions of Hydrofluoric acid (HF) with different concentrations or other cleaning agents are used for the cleaning of the backside of the substrate. The steps of cleaning the backside of the substrate can be performed at different intervals of creating a layer of high-k gate dielectric and the overlying layer of polysilicon, the process of backside cleaning can be applied more than once in order to remove all residue of high-k dielectric and polysilicon from the backside of the substrate.