Semiconductor wafer and production method therefor

Abstract

It is an object of the invention to provide a semiconductor wafer obtained by forming a semiconductor thin film with uniform resistivity on a main surface of a semiconductor single crystal substrate of 300 mm or more in diameter. When a process gas is supplied to over a main surface of a silicon single crystal substrate in rotation in almost parallel to the main surface thereof in one direction in a reaction chamber through six inlet ports to disposed in width direction of the reaction chamber H gas, a semiconductor raw material gas and a dopant gas are supplied onto an area in the vicinity of the center of the main surface of the silicon single crystal substrate and an intermediate area thereof through the inner inlet ports and and the middle inlet ports and and only H gas and the semiconductor raw material gas without the dopant gas are supplied onto an area in the vicinity of the outer periphery thereof from the outer inlet ports and In such arrangement, a dopant gas produced by the auto-doping phenomenon is supplied onto the area in the vicinity of the outer periphery of the main surface of the silicon single crystal substrate For this reason, the dopant gases from both sources are combined, thereby a concentration of the dopant gas supplied over all the main surface of the silicon single crystal substrate is almost uniform.