The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2002
Filed:
Mar. 25, 2002
Eric Adler, Jericho, VT (US);
Anthony Kendall Stamper, Williston, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A capacitor structure formed on an insulation layer includes a lower electrode formed on a surface of the insulation layer, a dielectric layer formed on a surface of the lower electrode, an upper electrode formed on a surface of the dielectric layer, a first spacer formed on a side portion of the upper electrode, and a second spacer formed on a side portion of the first spacer and a side portion of the lower electrode. This capacitor structure is formed by depositing a metal-insulator-metal capacitor stack on top of a via, masking and etching an upper electrode of the metal-insulator-metal capacitor stack, depositing and etching a first spacer on an edge surface of the upper electrode, defining a lower electrode of the metal-insulator-metal capacitor based on the first spacer, depositing and etching a second spacer on a surface of the first spacer and an edge of the lower electrode, and forming a wiring layer on a surface of the upper electrode and a surface of the second spacer. This capacitor structure provides a capacitor that is not prone to leakage down the capacitor sidewall and the corresponding method of manufacture provides a capacitor that is fabricated with increased efficiency (e.g., fewer mask steps).