The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2002

Filed:

Mar. 25, 2002
Applicant:
Inventors:

Hong-Chin Lin, Taipei, TW;

Fu-Nian Liang, Lu-Chou, TW;

Ching-Yuan Lin, Hsin-Chu Hsien, TW;

Assignee:

eMemory Technology Inc., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/606 ;
U.S. Cl.
CPC ...
G11C 1/606 ;
Abstract

A current-mode sense amplifier for detecting data stored in a flash memory cell. The sense amplifier has a first current generator for generating a first current to a first circuit according to current flowing out of the memory cell, a second current generator for generating a second current to a second circuit according to current flowing out of a reference cell, and a switch. When the switch is on and a common node of the first circuit and the second circuit is floating, the first and second circuits will generate equal initial voltages. When the switch is off and the common node of the first and second circuits is grounded, one of the initial voltages will increase, and the other initial voltage will decrease.


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